SIZ200DT-T1-GE3
MOSFET N-CH DUAL 30V
Nambari ya Sehemu
SIZ200DT-T1-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET® Gen IV
Hali ya Sehemu
Active
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
8-PowerWDFN
Nguvu - Max
4.3W (Ta), 33W (Tc)
Kifurushi cha Kifaa cha Wasambazaji
8-PowerPair® (3.3x3.3)
Aina ya FET
2 N-Channel (Dual)
Kipengele cha FET
Standard
Mimina hadi Chanzo Voltage (Vdss)
30V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs
5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V
Vgs(th) (Max) @ Kitambulisho
2.4V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
28nC @ 10V, 30nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
1510pF @ 15V, 1600pF @ 15V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 28650 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SIZ200DT-T1-GE3
SIZ200DT-T1-GE3 Vipengele vya elektroniki
SIZ200DT-T1-GE3 Mauzo
SIZ200DT-T1-GE3 Msambazaji
SIZ200DT-T1-GE3 Msambazaji
SIZ200DT-T1-GE3 Jedwali la data
SIZ200DT-T1-GE3 Picha
SIZ200DT-T1-GE3 Bei
SIZ200DT-T1-GE3 Toa
SIZ200DT-T1-GE3 Bei ya chini
SIZ200DT-T1-GE3 Tafuta
SIZ200DT-T1-GE3 Ununuzi
SIZ200DT-T1-GE3 Chip