SQD10N30-330H_GE3
MOSFET N-CH 300V 10A TO252AA
Nambari ya Sehemu
SQD10N30-330H_GE3
Mtengenezaji/Chapa
Mfululizo
Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu
Active
Ufungaji
-
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Wasambazaji
TO-252AA
Upotezaji wa Nguvu (Upeo)
107W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
300V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
10A (Tc)
Rds On (Max) @ Id, Vgs
330 mOhm @ 14A, 10V
Vgs(th) (Max) @ Kitambulisho
4.4V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
47nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
2190pF @ 25V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
10V
Vgs (Upeo)
±30V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 42425 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SQD10N30-330H_GE3
SQD10N30-330H_GE3 Vipengele vya elektroniki
SQD10N30-330H_GE3 Mauzo
SQD10N30-330H_GE3 Msambazaji
SQD10N30-330H_GE3 Msambazaji
SQD10N30-330H_GE3 Jedwali la data
SQD10N30-330H_GE3 Picha
SQD10N30-330H_GE3 Bei
SQD10N30-330H_GE3 Toa
SQD10N30-330H_GE3 Bei ya chini
SQD10N30-330H_GE3 Tafuta
SQD10N30-330H_GE3 Ununuzi
SQD10N30-330H_GE3 Chip