SUD20N10-66L-GE3
MOSFET N-CH 100V 16.9A TO-252
Nambari ya Sehemu
SUD20N10-66L-GE3
Mtengenezaji/Chapa
Mfululizo
TrenchFET®
Hali ya Sehemu
Active
Ufungaji
Tape & Reel (TR)
Teknolojia
MOSFET (Metal Oxide)
Joto la Uendeshaji
-55°C ~ 150°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi / Kesi
TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Wasambazaji
TO-252
Upotezaji wa Nguvu (Upeo)
2.1W (Ta), 41.7W (Tc)
Aina ya FET
N-Channel
Kipengele cha FET
-
Mimina hadi Chanzo Voltage (Vdss)
100V
Ya Sasa - Mifereji ya Kuendelea (Id) @ 25�C
16.9A (Tc)
Rds On (Max) @ Id, Vgs
66 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Kitambulisho
3V @ 250µA
Malipo ya Lango (Qg) (Max) @ Vgs
30nC @ 10V
Uwezo wa Kuingiza (Ciss) (Upeo zaidi) @ Vds
860pF @ 50V
Voltage ya Kuendesha (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Upeo)
±20V
Omba Nukuu
Tafadhali kamilisha sehemu zote zinazohitajika na ubofye "Wasilisha", tutawasiliana nawe baada ya saa 12 kupitia barua pepe. Ikiwa una tatizo lolote, tafadhali acha ujumbe au barua pepe kwa [email protected], tutajibu haraka iwezekanavyo.
Katika Hisa 14714 PCS
Maelezo ya Mawasiliano
Bidhaa Zinazohusiana
Maneno muhimu ya SUD20N10-66L-GE3
SUD20N10-66L-GE3 Vipengele vya elektroniki
SUD20N10-66L-GE3 Mauzo
SUD20N10-66L-GE3 Msambazaji
SUD20N10-66L-GE3 Msambazaji
SUD20N10-66L-GE3 Jedwali la data
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SUD20N10-66L-GE3 Chip